AUIRF4104S

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Mfr.Part #
AUIRF4104S
Manufacturer
International Rectifier
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 40V 75A D2PAK
Stock
3,028
In Stock :
3,028

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Manufacturer :
International Rectifier
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
38 ns
Gate to Source Voltage (Vgs) :
20V
Threshold Voltage :
2V
Number of Pins :
3
JESD-30 Code :
R-XSSO-G2
Series :
HEXFET®
Peak Reflow Temperature (Cel) :
260
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
9.65mm
Power Dissipation-Max :
140W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current (ID) :
75A
Avalanche Energy Rating (Eas) :
220 mJ
FET Type :
N-Channel
Mount :
Surface Mount
Length :
10.668mm
Vgs (Max) :
±20V
Operating Temperature :
-55°C~175°C TJ
Published :
2003
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
2
Mounting Type :
Surface Mount
Height :
4.826mm
Number of Elements :
1
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Contact Plating :
Tin
Element Configuration :
Single
Packaging :
Tube
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-source On Resistance-Max :
0.0055Ohm
Turn On Delay Time :
16 ns
Vgs(th) (Max) @ Id :
4V @ 250µA
REACH SVHC :
No SVHC
Radiation Hardening :
No
Power Dissipation :
140W
Rds On (Max) @ Id, Vgs :
5.5m Ω @ 75A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
3000pF @ 25V
Terminal Form :
Gull wing
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
100nC @ 10V
Fall Time (Typ) :
77 ns
Pulsed Drain Current-Max (IDM) :
470A
Transistor Application :
SWITCHING
Time@Peak Reflow Temperature-Max (s) :
30
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
JESD-609 Code :
e3
Rise Time :
130ns
Drain to Source Breakdown Voltage :
40V
Datasheets
AUIRF4104S
Introducing Transistors - FETs, MOSFETs - Single International Rectifier AUIRF4104S from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, AUIRF4104S pinout, AUIRF4104S datasheet PDF, AUIRF4104S amp .Beyond Transistors - FETs, MOSFETs - Single International Rectifier AUIRF4104S ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier AUIRF4104S


N-Channel Tube 5.5m Ω @ 75A, 10V ±20V 3000pF @ 25V 100nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AUIRF4104S Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 220 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 75A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=40V. And this device has 40V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 38 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 470A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 16 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 2V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.

AUIRF4104S Features


the avalanche energy rating (Eas) is 220 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 470A.
a threshold voltage of 2V


AUIRF4104S Applications


There are a lot of Infineon Technologies
AUIRF4104S applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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