AUIRF3808S
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- Mfr.Part #
- AUIRF3808S
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 106A D2PAK
- Stock
- 34,214
- In Stock ：
- 34,214
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 5310pF @ 25V
- Continuous Drain Current (ID) :
- 106A
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 4.83mm
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- Turn On Delay Time :
- 16 ns
- Number of Elements :
- 1
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 10.67mm
- Power Dissipation-Max :
- 200W Tc
- Fall Time (Typ) :
- 120 ns
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- 75V
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Current - Continuous Drain (Id) @ 25°C :
- 106A Tc
- Number of Terminations :
- 2
- Rise Time :
- 140ns
- Operating Temperature :
- -55°C~175°C TJ
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 220nC @ 10V
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Series :
- HEXFET®
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 82A, 10V
- Pulsed Drain Current-Max (IDM) :
- 550A
- Factory Lead Time :
- 9 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn-Off Delay Time :
- 68 ns
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation :
- 200W
- Published :
- 2011
- Threshold Voltage :
- 2V
- Drain-source On Resistance-Max :
- 0.007Ohm
- Contact Plating :
- Tin
- Width :
- 9.65mm
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- AUIRF3808S
N-Channel Tube 7m Ω @ 82A, 10V ±20V 5310pF @ 25V 220nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRF3808S Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5310pF @ 25V.This device has a continuous drain current (ID) of [106A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=75V, the drain-source breakdown voltage is 75V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 68 ns.A maximum pulsed drain current of 550A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 2V.Its overall power consumption can be reduced by using drive voltage (10V).
AUIRF3808S Features
a continuous drain current (ID) of 106A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 550A.
a threshold voltage of 2V
AUIRF3808S Applications
There are a lot of Infineon Technologies
AUIRF3808S applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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