AUIRF3808S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Mount :

Surface Mount

REACH SVHC :

No SVHC

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rise Time :

140ns

Turn-Off Delay Time :

68 ns

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.007Ohm

Input Capacitance (Ciss) (Max) @ Vds :

5310pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Factory Lead Time :

9 Weeks

Rds On (Max) @ Id, Vgs :

7m Ω @ 82A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

ECCN Code :

EAR99

Number of Terminations :

2

Drain to Source Breakdown Voltage :

75V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Threshold Voltage :

2V

FET Type :

N-Channel

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Power Dissipation :

200W

Continuous Drain Current (ID) :

106A

Current - Continuous Drain (Id) @ 25°C :

106A Tc

Radiation Hardening :

No

Contact Plating :

Tin

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Height :

4.83mm

Power Dissipation-Max :

200W Tc

Length :

10.67mm

Fall Time (Typ) :

120 ns

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

220nC @ 10V

Turn On Delay Time :

16 ns

Pulsed Drain Current-Max (IDM) :

550A

Published :

2011

Width :

9.65mm

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Peak Reflow Temperature (Cel) :

260