AUIRF3805S-7P

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Drain to Source Breakdown Voltage :

55V

Factory Lead Time :

13 Weeks

JESD-609 Code :

e3

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Rise Time :

130ns

Case Connection :

DRAIN

Fall Time (Typ) :

52 ns

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0026Ohm

Transistor Element Material :

SILICON

Power Dissipation :

300W

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Threshold Voltage :

2V

Contact Plating :

Tin

Rds On (Max) @ Id, Vgs :

2.6m Ω @ 140A, 10V

Element Configuration :

Single

ECCN Code :

EAR99

Series :

HEXFET®

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Mount :

Surface Mount

Turn On Delay Time :

23 ns

Published :

2010

Avalanche Energy Rating (Eas) :

680 mJ

Number of Pins :

7

Turn-Off Delay Time :

80 ns

Length :

10.35mm

Number of Terminations :

6

Height :

4.55mm

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

240A

REACH SVHC :

No SVHC

Number of Elements :

1

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G6

Width :

10.05mm

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

7820pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Power Dissipation-Max :

300W Tc