AUIRF3805L

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Avalanche Energy Rating (Eas) :

940 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Length :

10.67mm

JESD-609 Code :

e3

Element Configuration :

Single

Mounting Type :

Through Hole

Factory Lead Time :

16 Weeks

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

290nC @ 10V

Series :

HEXFET®

Drain to Source Breakdown Voltage :

55V

Power Dissipation :

300W

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 75A, 10V

Pulsed Drain Current-Max (IDM) :

890A

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

REACH SVHC :

No SVHC

Turn On Delay Time :

150 ns

Radiation Hardening :

No

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

300W Tc

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2010

Continuous Drain Current (ID) :

160A

Vgs (Max) :

±20V

Rise Time :

20ns

Fall Time (Typ) :

87 ns

Transistor Application :

SWITCHING

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

7960pF @ 25V

Turn-Off Delay Time :

93 ns

Height :

11.3mm

Width :

4.82mm

Mount :

Through Hole

Number of Terminations :

3

ECCN Code :

EAR99