AUIRF3710ZSTRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2010

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Element Configuration :

Single

Power Dissipation-Max :

160W Tc

Drain-source On Resistance-Max :

0.018Ohm

Time@Peak Reflow Temperature-Max (s) :

30

Width :

9.65mm

Rds On (Max) @ Id, Vgs :

18m Ω @ 35A, 10V

Terminal Form :

Gull wing

Mount :

Surface Mount

Height :

4.826mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

240A

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

2900pF @ 25V

Vgs (Max) :

±20V

Power Dissipation :

160W

Number of Pins :

3

Continuous Drain Current (ID) :

59A

Factory Lead Time :

16 Weeks

Turn-Off Delay Time :

41 ns

Current - Continuous Drain (Id) @ 25°C :

59A Tc

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

200 mJ

Gate Charge (Qg) (Max) @ Vgs :

120nC @ 10V

Rise Time :

77ns

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Length :

10.668mm

JESD-609 Code :

e3

Fall Time (Typ) :

56 ns

Turn On Delay Time :

17 ns

Drain to Source Breakdown Voltage :

100V

JESD-30 Code :

R-XSSO-G2

Series :

HEXFET®