AUIRF3415

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Threshold Voltage :

2V

Power Dissipation :

200W

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.66mm

Nominal Vgs :

2 V

Package / Case :

TO-220-3

Power Dissipation-Max :

200W Tc

Series :

HEXFET®

FET Type :

N-Channel

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 25V

Continuous Drain Current (ID) :

43A

Element Configuration :

Single

JEDEC-95 Code :

TO-220AB

Turn On Delay Time :

12 ns

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

71 ns

Published :

2011

Current - Continuous Drain (Id) @ 25°C :

43A Tc

Number of Elements :

1

Factory Lead Time :

8 Weeks

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Drain-source On Resistance-Max :

0.042Ohm

Height :

16.51mm

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

42m Ω @ 22A, 10V

Rise Time :

55ns

Width :

4.82mm

Number of Pins :

3

Avalanche Energy Rating (Eas) :

590 mJ

Fall Time (Typ) :

69 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Number of Terminations :

3

Drain to Source Breakdown Voltage :

150V