AUIRF3315S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

82m Ω @ 12A, 10V

Power Dissipation-Max :

3.8W Ta 94W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

38 ns

Power Dissipation :

3.8W

Rise Time :

32ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Continuous Drain Current (ID) :

21A

Turn-Off Delay Time :

49 ns

Drain to Source Breakdown Voltage :

150V

ECCN Code :

EAR99

Published :

2010

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Threshold Voltage :

2V

Packaging :

Tube

Turn On Delay Time :

9.6 ns

Radiation Hardening :

No

Number of Pins :

3

Element Configuration :

Single

Number of Elements :

1

Height :

4.83mm

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Width :

9.65mm

Mounting Type :

Surface Mount

Length :

10.67mm

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount