AUIRF3305

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

140A

Power Dissipation-Max :

330W Tc

Factory Lead Time :

16 Weeks

Power Dissipation :

330W

Turn On Delay Time :

16 ns

Published :

2006

Threshold Voltage :

2V

Mounting Type :

Through Hole

Width :

4.72mm

Avalanche Energy Rating (Eas) :

860 mJ

Packaging :

Tube

Number of Elements :

1

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

REACH SVHC :

No SVHC

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Mount :

Through Hole

Fall Time (Typ) :

34 ns

Rise Time :

88ns

Pulsed Drain Current-Max (IDM) :

560A

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

140A Tc

FET Type :

N-Channel

Turn-Off Delay Time :

43 ns

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Drain-source On Resistance-Max :

0.008Ohm

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Length :

10.66mm

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

8m Ω @ 75A, 10V

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Drain to Source Breakdown Voltage :

55V

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3650pF @ 25V

Height :

16.51mm

Vgs (Max) :

±20V