AUIRF2907Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 75A, 10V

Element Configuration :

Single

Continuous Drain Current (ID) :

75A

Turn-Off Delay Time :

97 ns

Number of Pins :

3

Power Dissipation-Max :

300W Tc

Rise Time :

140ns

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Threshold Voltage :

2V

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

100 ns

Turn On Delay Time :

19 ns

Length :

10.67mm

Vgs (Max) :

±20V

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

690 mJ

Number of Elements :

1

Drain-source On Resistance-Max :

0.0045ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

13 Weeks

Drain to Source Breakdown Voltage :

75V

Published :

2010

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

7500pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Gate to Source Voltage (Vgs) :

20V

Height :

16.51mm

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation :

300W

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

Width :

4.83mm

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

680A

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE