AUIRF2903ZSTRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Published :

2013

Number of Terminations :

2

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Vgs (Max) :

±20V

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

100ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Fall Time (Typ) :

37 ns

FET Type :

N-Channel

Power Dissipation :

231W

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 75A, 10V

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

30V

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Series :

HEXFET®

Power Dissipation-Max :

231W Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

160A

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

6320pF @ 25V

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

16 Weeks

Case Connection :

DRAIN

Turn-Off Delay Time :

48 ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.0024Ohm

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

1020A

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4V @ 150μA

Turn On Delay Time :

24 ns

Terminal Form :

Gull wing