AUIRF2903ZS
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- Mfr.Part #
- AUIRF2903ZS
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 160A D2PAK
- Stock
- 1,966
- In Stock ：
- 1,966
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 6320pF @ 25V
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Series :
- HEXFET®
- Turn-Off Delay Time :
- 48 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Nominal Vgs :
- 2 V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation-Max :
- 231W Tc
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- Published :
- 2010
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs (Max) :
- ±20V
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- Peak Reflow Temperature (Cel) :
- 260
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 37 ns
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 24 ns
- Drain-source On Resistance-Max :
- 0.0024Ohm
- Factory Lead Time :
- 16 Weeks
- Drain to Source Breakdown Voltage :
- 30V
- Power Dissipation :
- 231W
- Number of Terminations :
- 2
- Length :
- 10.67mm
- REACH SVHC :
- No SVHC
- Width :
- 9.65mm
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 100ns
- FET Type :
- N-Channel
- Contact Plating :
- Tin
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 2.4m Ω @ 75A, 10V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Packaging :
- Tube
- Height :
- 4.83mm
- Continuous Drain Current (ID) :
- 160A
- Current - Continuous Drain (Id) @ 25°C :
- 160A Tc
- Number of Elements :
- 1
- Datasheets
- AUIRF2903ZS
N-Channel Tube 2.4m Ω @ 75A, 10V ±20V 6320pF @ 25V 240nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRF2903ZS Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6320pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 48 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 24 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
AUIRF2903ZS Features
a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 48 ns
AUIRF2903ZS Applications
There are a lot of Infineon Technologies
AUIRF2903ZS applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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