AUIRF2903Z
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- Mfr.Part #
- AUIRF2903Z
- Manufacturer
- International Rectifier
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 160A TO220AB
- Stock
- 2,150
- In Stock ：
- 2,150
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 10.66mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Avalanche Energy Rating (Eas) :
- 820 mJ
- Published :
- 2004
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-220AB
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Contact Plating :
- Tin
- Turn-Off Delay Time :
- 48 ns
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 6320pF @ 25V
- Continuous Drain Current (ID) :
- 160A
- Rise Time :
- 100ns
- Turn On Delay Time :
- 24 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Height :
- 16.51mm
- Case Connection :
- DRAIN
- Element Configuration :
- Single
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-220-3
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
- Fall Time (Typ) :
- 37 ns
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 290W Tc
- Factory Lead Time :
- 16 Weeks
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Threshold Voltage :
- 2V
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Power Dissipation :
- 290W
- Mount :
- Through Hole
- Drain-source On Resistance-Max :
- 0.0024Ohm
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- 30V
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 2.4m Ω @ 75A, 10V
- Series :
- HEXFET®
- Nominal Vgs :
- 2 V
- Current - Continuous Drain (Id) @ 25°C :
- 160A Tc
- Width :
- 4.82mm
- Datasheets
- AUIRF2903Z
N-Channel Tube 2.4m Ω @ 75A, 10V ±20V 6320pF @ 25V 240nC @ 10V TO-220-3
AUIRF2903Z Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 820 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6320pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 160A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 48 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 24 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2V, which means that it will not activate any of its functions when its threshold voltage reaches 2V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
AUIRF2903Z Features
the avalanche energy rating (Eas) is 820 mJ
a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 48 ns
a threshold voltage of 2V
AUIRF2903Z Applications
There are a lot of Infineon Technologies
AUIRF2903Z applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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