AUIRF2807

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

48 ns

Threshold Voltage :

2V

Operating Temperature :

-55°C~175°C TJ

Series :

HEXFET®

ECCN Code :

EAR99

Power Dissipation-Max :

230W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

16.51mm

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Turn-Off Delay Time :

49 ns

Length :

10.66mm

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Number of Pins :

3

Contact Plating :

Tin

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

4.82mm

Pulsed Drain Current-Max (IDM) :

280A

RoHS Status :

RoHS Compliant

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

3820pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Factory Lead Time :

8 Weeks

Drain to Source Breakdown Voltage :

75V

Continuous Drain Current (ID) :

75A

Rise Time :

64ns

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

2 V

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2011

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-220AB

Radiation Hardening :

No

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Mount :

Through Hole

Power Dissipation :

230W

Rds On (Max) @ Id, Vgs :

13m Ω @ 43A, 10V

Turn On Delay Time :

13 ns

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

FET Type :

N-Channel

Transistor Application :

SWITCHING

Number of Elements :

1

Mounting Type :

Through Hole