AUIRF2807

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Series :

HEXFET®

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Radiation Hardening :

No

Turn-Off Delay Time :

49 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

13 ns

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Power Dissipation :

230W

Transistor Element Material :

SILICON

Width :

4.82mm

Drain to Source Breakdown Voltage :

75V

Pulsed Drain Current-Max (IDM) :

280A

RoHS Status :

RoHS Compliant

Number of Terminations :

3

Fall Time (Typ) :

48 ns

Factory Lead Time :

8 Weeks

Threshold Voltage :

2V

Mount :

Through Hole

Case Connection :

DRAIN

JEDEC-95 Code :

TO-220AB

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

13m Ω @ 43A, 10V

FET Type :

N-Channel

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

2 V

Operating Temperature :

-55°C~175°C TJ

Height :

16.51mm

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-220-3

REACH SVHC :

No SVHC

Rise Time :

64ns

Power Dissipation-Max :

230W Tc

Continuous Drain Current (ID) :

75A

Length :

10.66mm

Published :

2011

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

3820pF @ 25V

Contact Plating :

Tin