AUIRF2805
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- Mfr.Part #
- AUIRF2805
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- AUTOMOTIVE HEXFET N CHANNEL
- Stock
- 1,300
- In Stock ：
- 1,300
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 230nC @ 10V
- Terminal Form :
- Gull wing
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Drain Current-Max (Abs) (ID) :
- 75A
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- REACH SVHC :
- No SVHC
- Current - Continuous Drain (Id) @ 25°C :
- 135A Tc
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 30
- JESD-609 Code :
- e3
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Turn On Delay Time :
- 14 ns
- Published :
- 2011
- Rds On (Max) @ Id, Vgs :
- 4.7m Ω @ 104A, 10V
- Series :
- HEXFET®
- Nominal Vgs :
- 2 V
- Contact Plating :
- Tin
- Pulsed Drain Current-Max (IDM) :
- 700A
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 110 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 5110pF @ 25V
- Power Dissipation-Max :
- 200W Tc
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Length :
- 10.67mm
- Height :
- 4.83mm
- Power Dissipation :
- 200W
- FET Type :
- N-Channel
- Width :
- 9.65mm
- Number of Pins :
- 3
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Drain-source On Resistance-Max :
- 0.0047Ohm
- Operating Temperature :
- -55°C~175°C TJ
- Drain to Source Breakdown Voltage :
- 55V
- Turn-Off Delay Time :
- 68 ns
- Rise Time :
- 120ns
- Continuous Drain Current (ID) :
- 135A
- Vgs (Max) :
- ±20V
- Datasheets
- AUIRF2805
N-Channel Tube 4.7m Ω @ 104A, 10V ±20V 5110pF @ 25V 230nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRF2805S Overview
A device's maximum input capacitance is 5110pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 135A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.Its drain current is 75A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 68 ns.Its maximum pulsed drain current is 700A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
AUIRF2805S Features
a continuous drain current (ID) of 135A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 700A.
AUIRF2805S Applications
There are a lot of Infineon Technologies
AUIRF2805S applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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