AUIRF2805
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- Mfr.Part #
- AUIRF2805
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 75A TO220AB
- Stock
- 12,289
- In Stock ：
- 12,289
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 200W
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Transistor Application :
- SWITCHING
- Nominal Vgs :
- 2 V
- Width :
- 9.65mm
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 4.7m Ω @ 104A, 10V
- Terminal Form :
- Gull wing
- Packaging :
- Tube
- Drain Current-Max (Abs) (ID) :
- 75A
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Rise Time :
- 120ns
- Number of Elements :
- 1
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 135A Tc
- JESD-609 Code :
- e3
- Published :
- 2011
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 230nC @ 10V
- Turn On Delay Time :
- 14 ns
- Length :
- 10.67mm
- Case Connection :
- DRAIN
- Height :
- 4.83mm
- Continuous Drain Current (ID) :
- 135A
- Input Capacitance (Ciss) (Max) @ Vds :
- 5110pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 68 ns
- Series :
- HEXFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Fall Time (Typ) :
- 110 ns
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PSSO-G2
- FET Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- 260
- Drain to Source Breakdown Voltage :
- 55V
- Pulsed Drain Current-Max (IDM) :
- 700A
- Power Dissipation-Max :
- 200W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Terminations :
- 2
- REACH SVHC :
- No SVHC
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Drain-source On Resistance-Max :
- 0.0047Ohm
- Datasheets
- AUIRF2805
N-Channel Tube 4.7m Ω @ 104A, 10V ±20V 5110pF @ 25V 230nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRF2805S Overview
A device's maximum input capacitance is 5110pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 135A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=55V, and this device has a drain-to-source breakdown voltage of 55V voltage.Its drain current is 75A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 68 ns.Its maximum pulsed drain current is 700A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
AUIRF2805S Features
a continuous drain current (ID) of 135A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 700A.
AUIRF2805S Applications
There are a lot of Infineon Technologies
AUIRF2805S applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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