AUIRF2804WL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Drain to Source Breakdown Voltage :

40V

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Number of Elements :

1

Vgs (Max) :

±20V

Power Dissipation-Max :

300W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

1.8m Ω @ 187A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

295A

Published :

2010

Operating Temperature :

-55°C~175°C TJ

Height :

9.65mm

Factory Lead Time :

16 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

7978pF @ 25V

Turn On Delay Time :

19 ns

Fall Time (Typ) :

100 ns

Mounting Type :

Through Hole

Rise Time :

241ns

ECCN Code :

EAR99

Power Dissipation :

300W

Drain Current-Max (Abs) (ID) :

240A

Gate Charge (Qg) (Max) @ Vgs :

225nC @ 10V

Length :

10.67mm

Package / Case :

TO-262-3 Wide Leads

Turn-Off Delay Time :

71 ns

Current - Continuous Drain (Id) @ 25°C :

240A Tc

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Width :

4.83mm

Element Configuration :

Single