AUIRF2804STRL7P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-30 Code :

R-PSSO-G6

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 160A, 10V

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

6

Case Connection :

DRAIN

Factory Lead Time :

16 Weeks

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

1360A

Terminal Position :

Single

Power Dissipation-Max :

330W Tc

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

240A Tc

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW-ON RESISTANCE

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Vgs (Max) :

±20V

Published :

2010

Input Capacitance (Ciss) (Max) @ Vds :

6930pF @ 25V

Drain to Source Voltage (Vdss) :

40V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Series :

HEXFET®

ECCN Code :

EAR99

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

240A

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

1050 mJ

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

40V

Drain-source On Resistance-Max :

0.0016Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Qualification Status :

Not Qualified