AUIRF2804STRL7P

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

240A Tc

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 160A, 10V

JESD-30 Code :

R-PSSO-G6

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Surface Mount :

yes

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Pulsed Drain Current-Max (IDM) :

1360A

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

6

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW-ON RESISTANCE

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Power Dissipation-Max :

330W Tc

Factory Lead Time :

16 Weeks

DS Breakdown Voltage-Min :

40V

Time@Peak Reflow Temperature-Max (s) :

30

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

40V

Terminal Position :

Single

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

6930pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

240A

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

1050 mJ

Drain-source On Resistance-Max :

0.0016Ohm

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Published :

2010

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HEXFET®

Transistor Element Material :

SILICON

Number of Elements :

1