AUIRF2804S

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Rds On (Max) @ Id, Vgs :

2m Ω @ 75A, 10V

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

40V

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

6450pF @ 25V

Number of Terminations :

2

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

1080A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

270A

Published :

2003

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Case Connection :

DRAIN

Power Dissipation-Max :

300W Tc

Series :

HEXFET®

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

40V

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Qualification Status :

Not Qualified

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain-source On Resistance-Max :

0.0023Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

30

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

540 mJ

Number of Elements :

1

Factory Lead Time :

16 Weeks

Mounting Type :

Surface Mount