AUIRF2804S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

16 Weeks

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

40V

Drain-source On Resistance-Max :

0.0023Ohm

Current - Continuous Drain (Id) @ 25°C :

195A Tc

DS Breakdown Voltage-Min :

40V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Packaging :

Tube

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

JESD-609 Code :

e3

Number of Terminations :

2

Series :

HEXFET®

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

2m Ω @ 75A, 10V

Power Dissipation-Max :

300W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

6450pF @ 25V

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Case Connection :

DRAIN

ECCN Code :

EAR99

Published :

2003

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

270A

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

540 mJ

Transistor Application :

SWITCHING

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

1080A