AUIRF2804S-7P

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Threshold Voltage :

2V

Number of Elements :

1

Turn-Off Delay Time :

110 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

240A Tc

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Radiation Hardening :

No

Width :

9.652mm

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Rise Time :

150ns

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

Published :

2010

Length :

10.668mm

Operating Mode :

ENHANCEMENT MODE

Height :

4.572mm

Power Dissipation :

300W

Power Dissipation-Max :

330W Tc

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

1.6m Ω @ 160A, 10V

Mount :

Surface Mount

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Continuous Drain Current (ID) :

240A

Input Capacitance (Ciss) (Max) @ Vds :

6930pF @ 25V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HEXFET®

Vgs(th) (Max) @ Id :

4V @ 250µA

Fall Time (Typ) :

100 ns

Vgs (Max) :

±20V

Number of Pins :

7

Drain to Source Breakdown Voltage :

40V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW-ON RESISTANCE

Element Configuration :

Single

Number of Terminations :

6

Case Connection :

DRAIN

Packaging :

Tube

Factory Lead Time :

13 Weeks

Turn On Delay Time :

17 ns

JESD-30 Code :

R-PSSO-G6