AUIRF2804

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Height :

12.88mm

REACH SVHC :

No SVHC

Threshold Voltage :

2V

Turn On Delay Time :

13 ns

Mounting Type :

Through Hole

Element Configuration :

Single

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 75A, 10V

Mount :

Through Hole

Number of Pins :

3

Power Dissipation :

300W

Number of Terminations :

3

Width :

4.82mm

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Turn-Off Delay Time :

130 ns

Radiation Hardening :

No

Number of Elements :

1

FET Type :

N-Channel

Length :

10.66mm

Continuous Drain Current (ID) :

195A

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Power Dissipation-Max :

300W Tc

Factory Lead Time :

16 Weeks

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

40V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

120ns

Package / Case :

TO-220-3

Avalanche Energy Rating (Eas) :

540 mJ

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Drain Current-Max (Abs) (ID) :

270A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2010

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

6450pF @ 25V

Series :

HEXFET®

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

130 ns

Transistor Application :

SWITCHING