AUIRF2804

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

REACH SVHC :

No SVHC

Turn On Delay Time :

13 ns

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Element Configuration :

Single

Length :

10.66mm

Width :

4.82mm

Rise Time :

120ns

FET Type :

N-Channel

Height :

12.88mm

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

2V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

40V

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 75A, 10V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Power Dissipation :

300W

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Transistor Element Material :

SILICON

Published :

2010

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Number of Pins :

3

Factory Lead Time :

16 Weeks

Fall Time (Typ) :

130 ns

Power Dissipation-Max :

300W Tc

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Mount :

Through Hole

Packaging :

Tube

Continuous Drain Current (ID) :

195A

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

270A

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

6450pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

540 mJ

Turn-Off Delay Time :

130 ns

Number of Elements :

1