AUIRF1405ZSTRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

55V

JESD-609 Code :

e3

Height :

4.826mm

Case Connection :

DRAIN

Width :

9.65mm

Radiation Hardening :

No

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins :

3

Rise Time :

110ns

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Factory Lead Time :

16 Weeks

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Turn-Off Delay Time :

48 ns

Terminal Form :

Gull wing

Turn On Delay Time :

18 ns

Current - Continuous Drain (Id) @ 25°C :

150A Tc

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

4780pF @ 25V

Number of Elements :

1

Power Dissipation :

230W

ECCN Code :

EAR99

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Drain-source On Resistance-Max :

0.0049Ohm

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2013

Continuous Drain Current (ID) :

150A

Mounting Type :

Surface Mount

Fall Time (Typ) :

82 ns

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Length :

10.668mm

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

230W Tc

Pulsed Drain Current-Max (IDM) :

600A

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

4.9m Ω @ 75A, 10V

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

270 mJ

Series :

HEXFET®

Element Configuration :

Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier