AUIRF1404ZSTRL

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

40V

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Number of Elements :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Fall Time (Typ) :

58 ns

Length :

10.668mm

Continuous Drain Current (ID) :

160A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

110ns

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Factory Lead Time :

16 Weeks

Power Dissipation-Max :

200W Tc

Number of Terminations :

2

ECCN Code :

EAR99

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Published :

2010

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

200W

Input Capacitance (Ciss) (Max) @ Vds :

4340pF @ 25V

Height :

4.826mm

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 75A, 10V

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

18 ns

Series :

HEXFET®

Width :

9.65mm

Turn-Off Delay Time :

36 ns

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Case Connection :

DRAIN

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Avalanche Energy Rating (Eas) :

480 mJ

Time@Peak Reflow Temperature-Max (s) :

30