AUIRF1404ZS
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- Mfr.Part #
- AUIRF1404ZS
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 160A D2PAK
- Stock
- 3,495
- In Stock ：
- 3,495
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Height :
- 4.83mm
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Series :
- HEXFET®
- Power Dissipation-Max :
- 200W Tc
- JESD-609 Code :
- e3
- Power Dissipation :
- 200W
- Peak Reflow Temperature (Cel) :
- 260
- Vgs (Max) :
- ±20V
- Avalanche Energy Rating (Eas) :
- 480 mJ
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Form :
- Gull wing
- Input Capacitance (Ciss) (Max) @ Vds :
- 4340pF @ 25V
- REACH SVHC :
- No SVHC
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 2
- Turn-Off Delay Time :
- 36 ns
- Fall Time (Typ) :
- 58 ns
- Drain to Source Breakdown Voltage :
- 40V
- Element Configuration :
- Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Current - Continuous Drain (Id) @ 25°C :
- 160A Tc
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Rise Time :
- 110ns
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Published :
- 2010
- Length :
- 10.67mm
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 160A
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Threshold Voltage :
- 2V
- Packaging :
- Tube
- Contact Plating :
- Tin
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Turn On Delay Time :
- 18 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 9.65mm
- Transistor Application :
- SWITCHING
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Factory Lead Time :
- 16 Weeks
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 3.7m Ω @ 75A, 10V
- Datasheets
- AUIRF1404ZS
N-Channel Tube 3.7m Ω @ 75A, 10V ±20V 4340pF @ 25V 150nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRF1404ZS Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 480 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 4340pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 40V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 40V.As a result of its turn-off delay time, which is 36 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 18 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 2V.In addition to reducing power consumption, this device uses drive voltage (10V).
AUIRF1404ZS Features
the avalanche energy rating (Eas) is 480 mJ
a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 36 ns
a threshold voltage of 2V
AUIRF1404ZS Applications
There are a lot of Infineon Technologies
AUIRF1404ZS applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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