AUIRF1404ZL
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- Mfr.Part #
- AUIRF1404ZL
- Manufacturer
- International Rectifier
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 160A TO262
- Stock
- 1,913
- In Stock ：
- 1,913
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 3.7m Ω @ 75A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 200W Tc
- Number of Pins :
- 3
- Published :
- 2010
- Power Dissipation :
- 200W
- Height :
- 9.652mm
- Threshold Voltage :
- 2V
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 58 ns
- Turn-Off Delay Time :
- 36 ns
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 40V
- Current - Continuous Drain (Id) @ 25°C :
- 160A Tc
- Series :
- HEXFET®
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 4340pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Packaging :
- Tube
- Element Configuration :
- Single
- Width :
- 4.826mm
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~175°C TJ
- Rise Time :
- 110ns
- Avalanche Energy Rating (Eas) :
- 480 mJ
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 18 ns
- Continuous Drain Current (ID) :
- 160A
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Length :
- 10.668mm
- Factory Lead Time :
- 16 Weeks
- Datasheets
- AUIRF1404ZL
N-Channel Tube 3.7m Ω @ 75A, 10V ±20V 4340pF @ 25V 150nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
AUIRF1404ZL Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 480 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4340pF @ 25V.This device conducts a continuous drain current (ID) of 160A, which is the maximum continuous current transistor can conduct.Using VGS=40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 40V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 36 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 18 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
AUIRF1404ZL Features
the avalanche energy rating (Eas) is 480 mJ
a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 36 ns
a threshold voltage of 2V
AUIRF1404ZL Applications
There are a lot of Infineon Technologies
AUIRF1404ZL applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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