AUIRF1404STRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

40V

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain Current-Max (Abs) (ID) :

75A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

650A

FET Type :

N-Channel

Terminal Position :

Single

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Input Capacitance (Ciss) (Max) @ Vds :

7360pF @ 25V

Drain to Source Voltage (Vdss) :

40V

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

75A Tc

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Avalanche Energy Rating (Eas) :

519 mJ

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

4m Ω @ 95A, 10V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

3.8W Ta 200W Tc

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.004ohm

Terminal Form :

Gull wing

Series :

HEXFET®

Published :

2010

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

16 Weeks