AUIRF1404

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

33 ns

Series :

HEXFET®

Power Dissipation :

333W

Turn On Delay Time :

17 ns

Power Dissipation-Max :

333W Tc

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Nominal Vgs :

2 V

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Width :

4.82mm

Radiation Hardening :

No

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

4m Ω @ 121A, 10V

Published :

2007

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Avalanche Energy Rating (Eas) :

620 mJ

Rise Time :

190ns

Factory Lead Time :

16 Weeks

Mounting Type :

Through Hole

Threshold Voltage :

2V

Additional Feature :

AVALANCHE RATED

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Height :

16.51mm

Length :

10.66mm

Turn-Off Delay Time :

46 ns

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

808A

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.004ohm

Gate Charge (Qg) (Max) @ Vgs :

196nC @ 10V

Element Configuration :

Single

Drain to Source Breakdown Voltage :

40V

Input Capacitance (Ciss) (Max) @ Vds :

5669pF @ 25V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

160A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Packaging :

Tube

Mount :

Through Hole