AUIRF1324WL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

7630pF @ 19V

Radiation Hardening :

No

Contact Plating :

Tin

Element Configuration :

Single

Nominal Vgs :

2 V

Vgs(th) (Max) @ Id :

4V @ 250µA

Length :

10.67mm

Series :

HEXFET®

Turn On Delay Time :

18 ns

ECCN Code :

EAR99

Published :

2011

Power Dissipation :

300W

Rds On (Max) @ Id, Vgs :

1.3m Ω @ 195A, 10V

Current - Continuous Drain (Id) @ 25°C :

240A Tc

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

240A

Height :

11.3mm

RoHS Status :

ROHS3 Compliant

Rise Time :

200ns

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Width :

4.83mm

JEDEC-95 Code :

TO-262AA

REACH SVHC :

No SVHC

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

110 ns

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

24V

Mount :

Through Hole

Transistor Application :

SWITCHING

Package / Case :

TO-262-3 Wide Leads

Factory Lead Time :

16 Weeks

Power Dissipation-Max :

300W Tc

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Threshold Voltage :

2V

Vgs (Max) :

±20V

JESD-609 Code :

e3

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

75 ns

Number of Terminations :

3

Packaging :

Tube