AUIRF1324STRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

195A

Number of Elements :

1

Length :

10.668mm

Mount :

Surface Mount

Turn On Delay Time :

17 ns

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Factory Lead Time :

16 Weeks

Rds On (Max) @ Id, Vgs :

1.65m Ω @ 195A, 10V

Avalanche Energy Rating (Eas) :

270 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Power Dissipation-Max :

300W Tc

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Number of Pins :

3

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

1420A

Radiation Hardening :

No

Terminal Form :

Gull wing

Element Configuration :

Single

Drain to Source Breakdown Voltage :

24V

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Rise Time :

190ns

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

120 ns

Power Dissipation :

300W

Input Capacitance (Ciss) (Max) @ Vds :

7590pF @ 24V

Height :

4.572mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn-Off Delay Time :

83 ns

Operating Temperature :

-55°C~175°C TJ

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Published :

2010

Width :

9.65mm

Drain-source On Resistance-Max :

0.00165Ohm

Additional Feature :

ULTRA-LOW RESISTANCE

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

JESD-30 Code :

R-PSSO-G2

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

Series :

HEXFET®