AUIRF1324S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Number of Pins :

3

Series :

HEXFET®

Height :

4.83mm

Mount :

Surface Mount

Rise Time :

190ns

Additional Feature :

ULTRA-LOW RESISTANCE

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

24V

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

1.65m Ω @ 195A, 10V

Width :

9.65mm

ECCN Code :

EAR99

Published :

2010

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

83 ns

Continuous Drain Current (ID) :

195A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Fall Time (Typ) :

120 ns

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Threshold Voltage :

2V

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

300W Tc

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

JESD-609 Code :

e3

Number of Terminations :

2

Turn On Delay Time :

17 ns

Input Capacitance (Ciss) (Max) @ Vds :

7590pF @ 24V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

270 mJ

Length :

10.67mm

Transistor Element Material :

SILICON

Power Dissipation :

300W

Factory Lead Time :

39 Weeks

Vgs (Max) :

±20V