AUIRF1324S

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

39 Weeks

Gate to Source Voltage (Vgs) :

20V

Peak Reflow Temperature (Cel) :

260

Width :

9.65mm

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Rise Time :

190ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

7590pF @ 24V

ECCN Code :

EAR99

Number of Elements :

1

Drain to Source Breakdown Voltage :

24V

JESD-609 Code :

e3

Element Configuration :

Single

Additional Feature :

ULTRA-LOW RESISTANCE

Threshold Voltage :

2V

Fall Time (Typ) :

120 ns

Packaging :

Tube

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Turn-Off Delay Time :

83 ns

Power Dissipation-Max :

300W Tc

Mounting Type :

Surface Mount

Power Dissipation :

300W

Contact Plating :

Tin

Avalanche Energy Rating (Eas) :

270 mJ

Turn On Delay Time :

17 ns

Published :

2010

Rds On (Max) @ Id, Vgs :

1.65m Ω @ 195A, 10V

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Continuous Drain Current (ID) :

195A

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

30

Length :

10.67mm

Series :

HEXFET®

Number of Terminations :

2

Radiation Hardening :

No

Height :

4.83mm

Terminal Form :

Gull wing