AUIRF1324S-7P

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Factory Lead Time :

39 Weeks

Gate Charge (Qg) (Max) @ Vgs :

252nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

240A Tc

Turn On Delay Time :

19 ns

Height :

4.55mm

Continuous Drain Current (ID) :

429A

JESD-609 Code :

e3

Max Operating Temperature :

175°C

Length :

10.35mm

Input Capacitance (Ciss) (Max) @ Vds :

7700pF @ 19V

Drain to Source Breakdown Voltage :

24V

Peak Reflow Temperature (Cel) :

260

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

230 mJ

JESD-30 Code :

R-XSSO-G6

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

30

Fall Time (Typ) :

93 ns

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

1m Ω @ 160A, 10V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 250µA

Threshold Voltage :

2V

Number of Elements :

1

Rise Time :

240ns

Max Power Dissipation :

300W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

240A

Transistor Application :

SWITCHING

Mount :

Surface Mount

Case Connection :

DRAIN

Turn-Off Delay Time :

86 ns

Additional Feature :

ULTRA-LOW RESISTANCE

Series :

HEXFET®

ECCN Code :

EAR99

Power Dissipation :

300W

FET Type :

N-Channel

Element Configuration :

Single

Contact Plating :

Tin

Published :

2010

REACH SVHC :

No SVHC

Number of Pins :

7

Number of Terminations :

6