AUIRF1324

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

300W Tc

Factory Lead Time :

16 Weeks

Radiation Hardening :

No

Transistor Element Material :

SILICON

Turn On Delay Time :

17 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Length :

10.6426mm

Drain to Source Breakdown Voltage :

24V

Rds On (Max) @ Id, Vgs :

1.5m Ω @ 195A, 10V

Transistor Application :

SWITCHING

Mount :

Through Hole

Fall Time (Typ) :

120 ns

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Number of Terminations :

3

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

7590pF @ 24V

Height :

16.51mm

Avalanche Energy Rating (Eas) :

270 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Width :

4.82mm

Number of Elements :

1

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

2V

Mounting Type :

Through Hole

Series :

HEXFET®

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Published :

2006

Rise Time :

190ns

Vgs (Max) :

±20V

Turn-Off Delay Time :

83 ns

Power Dissipation :

300W

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Additional Feature :

ULTRA-LOW RESISTANCE

ECCN Code :

EAR99

Continuous Drain Current (ID) :

195A

Drive Voltage (Max Rds On,Min Rds On) :

10V