AUIRF1018ES
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- Mfr.Part #
- AUIRF1018ES
- Manufacturer
- International Rectifier
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- AUTOMOTIVE HEXFET N CHANNEL
- Stock
- 7,484
- In Stock ：
- 7,484
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tube
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Gate Charge (Qg) (Max) @ Vgs :
- 69nC @ 10V
- Avalanche Energy Rating (Eas) :
- 88 mJ
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Drain Current (ID) :
- 79A
- Turn-Off Delay Time :
- 55 ns
- Height :
- 4.83mm
- Drain to Source Breakdown Voltage :
- 60V
- Drain-source On Resistance-Max :
- 0.0084Ohm
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- Power Dissipation-Max :
- 110W Tc
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 46 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2011
- FET Type :
- N-Channel
- Number of Terminations :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 2290pF @ 50V
- Contact Plating :
- Lead, Tin
- Operating Mode :
- ENHANCEMENT MODE
- REACH SVHC :
- No SVHC
- Additional Feature :
- AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
- Vgs (Max) :
- ±20V
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 110W
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.67mm
- Operating Temperature :
- -55°C~175°C TJ
- Rds On (Max) @ Id, Vgs :
- 8.4m Ω @ 47A, 10V
- Series :
- HEXFET®
- Turn On Delay Time :
- 13 ns
- JESD-30 Code :
- R-PSSO-G2
- Width :
- 9.65mm
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Current - Continuous Drain (Id) @ 25°C :
- 79A Tc
- ECCN Code :
- EAR99
- Rise Time :
- 35ns
- Case Connection :
- DRAIN
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheets
- AUIRF1018ES
N-Channel Tube 8.4m Ω @ 47A, 10V ±20V 2290pF @ 50V 69nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRF1018ES Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 88 mJ.A device's maximum input capacitance is 2290pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 79A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 55 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
AUIRF1018ES Features
the avalanche energy rating (Eas) is 88 mJ
a continuous drain current (ID) of 79A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 55 ns
AUIRF1018ES Applications
There are a lot of Infineon Technologies
AUIRF1018ES applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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