AUIRF1018E
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- Mfr.Part #
- AUIRF1018E
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 79A TO220AB
- Stock
- 42
- In Stock ：
- 42
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Width :
- 9.65mm
- Fall Time (Typ) :
- 46 ns
- Packaging :
- Tube
- Power Dissipation :
- 110W
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 55 ns
- Continuous Drain Current (ID) :
- 79A
- Avalanche Energy Rating (Eas) :
- 88 mJ
- Power Dissipation-Max :
- 110W Tc
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 2290pF @ 50V
- Gate Charge (Qg) (Max) @ Vgs :
- 69nC @ 10V
- Rise Time :
- 35ns
- Drain-source On Resistance-Max :
- 0.0084Ohm
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 79A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id :
- 4V @ 100µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 10.67mm
- Additional Feature :
- AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
- Turn On Delay Time :
- 13 ns
- Height :
- 4.83mm
- Operating Temperature :
- -55°C~175°C TJ
- Case Connection :
- DRAIN
- Contact Plating :
- Lead, Tin
- Terminal Form :
- Gull wing
- Series :
- HEXFET®
- Vgs (Max) :
- ±20V
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- JESD-30 Code :
- R-PSSO-G2
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 8.4m Ω @ 47A, 10V
- Published :
- 2011
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Datasheets
- AUIRF1018E
N-Channel Tube 8.4m Ω @ 47A, 10V ±20V 2290pF @ 50V 69nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRF1018ES Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 88 mJ.A device's maximum input capacitance is 2290pF @ 50V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 79A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=60V, and this device has a drain-to-source breakdown voltage of 60V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 55 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 13 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
AUIRF1018ES Features
the avalanche energy rating (Eas) is 88 mJ
a continuous drain current (ID) of 79A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 55 ns
AUIRF1018ES Applications
There are a lot of Infineon Technologies
AUIRF1018ES applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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