AUIRF1010Z

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Fall Time (Typ) :

92 ns

Number of Pins :

3

Threshold Voltage :

2V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Power Dissipation :

140W

Series :

HEXFET®

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

55V

Width :

4.826mm

Rise Time :

150ns

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

36 ns

Drain Current-Max (Abs) (ID) :

75A

Height :

16.51mm

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.0075Ohm

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

7.5m Ω @ 75A, 10V

Mounting Type :

Through Hole

Published :

2010

Turn On Delay Time :

18 ns

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Gate Charge (Qg) (Max) @ Vgs :

95nC @ 10V

Element Configuration :

Single

Continuous Drain Current (ID) :

94A

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

2840pF @ 25V

Length :

10.668mm

Mount :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Radiation Hardening :

No

Package / Case :

TO-220-3

REACH SVHC :

No SVHC

Factory Lead Time :

16 Weeks

Power Dissipation-Max :

140W Tc

JESD-609 Code :

e3

ECCN Code :

EAR99

Case Connection :

DRAIN

Contact Plating :

Tin

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON