AUIRF1010EZSTRL

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Width :

9.3472mm

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

38 ns

Rise Time :

90ns

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 51A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2810pF @ 25V

Height :

4.826mm

Radiation Hardening :

No

Turn On Delay Time :

19 ns

Contact Plating :

Tin

Length :

10.668mm

Case Connection :

DRAIN

JESD-609 Code :

e3

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Series :

HEXFET®

FET Type :

N-Channel

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Factory Lead Time :

16 Weeks

Power Dissipation :

140W

Continuous Drain Current (ID) :

75A

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain-source On Resistance-Max :

0.0085Ohm

Transistor Application :

SWITCHING

Published :

2010

Additional Feature :

ULTRA-LOW RESISTANCE

Power Dissipation-Max :

140W Tc

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

30

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Fall Time (Typ) :

54 ns

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PDSO-G2

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

60V

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON