AUIRF1010EZS
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- Mfr.Part #
- AUIRF1010EZS
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 75A D2PAK
- Stock
- 42,882
- In Stock ：
- 42,882
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 86nC @ 10V
- Drain to Source Breakdown Voltage :
- 60V
- Number of Terminations :
- 2
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 19 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2810pF @ 25V
- Number of Elements :
- 1
- Fall Time (Typ) :
- 54 ns
- Power Dissipation :
- 140W
- Rds On (Max) @ Id, Vgs :
- 8.5m Ω @ 51A, 10V
- Transistor Application :
- SWITCHING
- Width :
- 9.65mm
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Operating Mode :
- ENHANCEMENT MODE
- JESD-30 Code :
- R-PDSO-G2
- Series :
- HEXFET®
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Factory Lead Time :
- 16 Weeks
- Packaging :
- Tube
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Drain-source On Resistance-Max :
- 0.0085Ohm
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Height :
- 4.83mm
- Length :
- 10.67mm
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 38 ns
- REACH SVHC :
- No SVHC
- Case Connection :
- DRAIN
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Terminal Position :
- Dual
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~175°C TJ
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 90ns
- Terminal Form :
- Gull wing
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2010
- Threshold Voltage :
- 2V
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 75A
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation-Max :
- 140W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Datasheets
- AUIRF1010EZS
N-Channel Tube 8.5m Ω @ 51A, 10V ±20V 2810pF @ 25V 86nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
AUIRF1010EZS Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2810pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 75A.With a drain-source breakdown voltage of 60V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 60V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 38 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 19 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.2V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.
AUIRF1010EZS Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 38 ns
a threshold voltage of 2V
AUIRF1010EZS Applications
There are a lot of Infineon Technologies
AUIRF1010EZS applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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