ATP301-TL-H
- Mfr.Part #
- ATP301-TL-H
- Manufacturer
- onsemi
- Package / Case
- ATPAK (2 leads+tab)
- Datasheet
- Download
- Description
- MOSFET P-CH 100V 28A ATPAK
- Stock
- 2,016
- In Stock :
- 2,016
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- P-Channel
- Continuous Drain Current (ID) :
- -28A
- Packaging :
- Tape and Reel (TR)
- Surface Mount :
- yes
- JESD-30 Code :
- R-PSSO-G2
- REACH SVHC :
- No SVHC
- Gate Charge (Qg) (Max) @ Vgs :
- 73nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 14A, 10V
- Factory Lead Time :
- 27 Weeks
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 330 ns
- Published :
- 2009
- Pin Count :
- 3
- Number of Elements :
- 1
- Length :
- 6.5mm
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Termination :
- SMD/SMT
- Power Dissipation-Max :
- 70W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 28A Ta
- Height :
- 1.5mm
- Operating Mode :
- ENHANCEMENT MODE
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Avalanche Energy Rating (Eas) :
- 54 mJ
- Package / Case :
- ATPAK (2 leads+tab)
- Drain to Source Breakdown Voltage :
- 100V
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 190 ns
- Lead Free :
- Lead Free
- JESD-609 Code :
- e6
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 130ns
- Case Connection :
- DRAIN
- RoHS Status :
- ROHS3 Compliant
- Width :
- 7.3mm
- Turn On Delay Time :
- 32 ns
- Power Dissipation :
- 70W
- Drain-source On Resistance-Max :
- 0.075Ohm
- Number of Terminations :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 4000pF @ 20V
- Halogen Free :
- Halogen Free
- Datasheets
- ATP301-TL-H

P-Channel Tape & Reel (TR) 75m Ω @ 14A, 10V ±20V 4000pF @ 20V 73nC @ 10V ATPAK (2 leads+tab)
ATP301-TL-H Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 54 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4000pF @ 20V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -28A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=100V. And this device has 100V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 330 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 32 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.
ATP301-TL-H Features
the avalanche energy rating (Eas) is 54 mJ
a continuous drain current (ID) of -28A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 330 ns
ATP301-TL-H Applications
There are a lot of ON Semiconductor
ATP301-TL-H applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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