AS4C8M16S-6TCN
- Mfr.Part #
- AS4C8M16S-6TCN
- Manufacturer
- Alliance Memory, Inc.
- Package / Case
- 54-TSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 128MBIT PAR 54TSOP II
- Stock
- 35,684
- In Stock :
- 35,684
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- Manufacturer :
- Alliance Memory, Inc.
- Product Category :
- Memory
- Operating Supply Voltage :
- 3.3V
- Access Time :
- 5ns
- Standby Current-Max :
- 0.002A
- Output Characteristics :
- 3-STATE
- Pin Count :
- 54
- Sequential Burst Length :
- 1248FP
- Memory Type :
- Volatile
- Number of Functions :
- 1
- Address Bus Width :
- 12b
- Clock Frequency :
- 166MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Interleaved Burst Length :
- 1248
- Density :
- 128 Mb
- Voltage - Supply :
- 3V~3.6V
- Published :
- 2012
- Length :
- 22.22mm
- Pbfree Code :
- yes
- Number of Pins :
- 54
- Surface Mount :
- yes
- Supply Voltage :
- 3.3V
- Radiation Hardening :
- No
- RoHS Status :
- RoHS Compliant
- I/O Type :
- COMMON
- Organization :
- 8MX16
- Operating Temperature :
- 0°C~70°C TA
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3/e6
- Peak Reflow Temperature (Cel) :
- 260
- Memory Size :
- 128Mb 8M x 16
- Memory Format :
- DRAM
- Terminal Pitch :
- 0.8mm
- Package / Case :
- 54-TSOP (0.400, 10.16mm Width)
- Lead Free :
- Lead Free
- Number of Terminations :
- 54
- ECCN Code :
- EAR99
- Refresh Cycles :
- 4096
- Terminal Finish :
- PURE MATTE TIN/TIN BISMUTH
- Supply Voltage-Max (Vsup) :
- 3.6V
- Terminal Position :
- Dual
- Memory Width :
- 16
- Supply Current-Max :
- 0.14mA
- Height Seated (Max) :
- 1.2mm
- Write Cycle Time - Word, Page :
- 2ns
- Packaging :
- Tray
- Memory Interface :
- Parallel
- Supply Voltage-Min (Vsup) :
- 3V
- Additional Feature :
- CAS BEFORE RAS/SELF REFRESH/AUTO REFRESH
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Number of Ports :
- 1
- Data Bus Width :
- 16b
- Datasheets
- AS4C8M16S-6TCN

Memory Alliance Memory, Inc. AS4C8M16S-6TCN Overview
The Memory Alliance Memory, Inc. AS4C8M16S-6TCN is a high-performance 128Mbit DRAM integrated circuit, tailored for applications requiring high-speed data retrieval and substantial storage capacity. Designed using the robust 54TSOP II package, this product stands out for its reliability and durability in challenging environments. It offers a perfect blend of performance, power efficiency, and density, making it an ideal choice for manufacturers looking to optimize their electronic systems. This Memory classification DRAM leverages advanced technology to provide outstanding functionality and operational excellence, crucial for B2B customers who require high volume, dependable memory solutions.
AS4C8M16S-6TCN Features
This DRAM IC comes with several key features that enhance its suitability for a wide range of industrial applications. It operates at a standard temperature range, ensuring reliability under varied environmental conditions. The parallel interface facilitates fast and efficient data handling capabilities, crucial for systems requiring quick access to large amounts of data. Moreover, its low-power consumption makes it an excellent choice for applications where energy efficiency is paramount.
AS4C8M16S-6TCN Applications
- Telecommunications Equipment: Utilized in routers and switches for buffer memory, enhancing the device's speed and handling of multiple data streams.
- Consumer Electronics: Integral for advanced audio and video devices, providing the necessary memory capacity for smooth and responsive user experiences.
- Automotive Systems: Supports dashboard functionalities and infotainment systems requiring robust and reliable memory performance in various driving conditions.
- Industrial Automation: In PLCs and other control systems, it offers the required data storage and access speed that facilitate efficient process control and monitoring.
- Portable Devices: Used in mobile phones and handheld gaming devices, contributing to compact design and extended battery life due to its low power draw.
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