AS4C128M16D3-12BIN

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Mfr.Part #
AS4C128M16D3-12BIN
Manufacturer
Alliance Memory, Inc.
Package / Case
96-TFBGA
Datasheet
Download
Description
IC DRAM 2GBIT PARALLEL 96FBGA
Stock
45,439
In Stock :
45,439

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Manufacturer :
Alliance Memory, Inc.
Product Category :
Memory
Organization :
128MX16
Supply Voltage-Max (Vsup) :
1.575V
Density :
2 GB
Terminal Position :
BOTTOM
Access Time :
20ns
Surface Mount :
yes
Operating Temperature :
-40°C~95°C TC
Supply Voltage-Min (Vsup) :
1.425V
Package / Case :
96-TFBGA
Operating Supply Voltage :
1.5V
Length :
13mm
Additional Feature :
AUTO/SELF REFRESH
Terminal Pitch :
0.8mm
Address Bus Width :
14b
Memory Size :
2Gb 128M x 16
Number of Terminations :
96
Height Seated (Max) :
1.2mm
Number of Functions :
1
Published :
2014
Number of Pins :
96
Memory Type :
Volatile
Memory Interface :
Parallel
Supply Voltage :
1.5V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Mode :
SYNCHRONOUS
HTS Code :
8542.32.00.36
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Memory Width :
16
Clock Frequency :
800MHz
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
Number of Ports :
1
Memory Format :
DRAM
Voltage - Supply :
1.425V~1.575V
Lead Free :
Lead Free
Packaging :
Tray
Mounting Type :
Surface Mount
Write Cycle Time - Word, Page :
15ns
Introducing Memory Alliance Memory, Inc. AS4C128M16D3-12BIN from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~95°C TC, Package / Case:96-TFBGA, Number of Terminations:96, Number of Pins:96, Mounting Type:Surface Mount, AS4C128M16D3-12BIN pinout, AS4C128M16D3-12BIN datasheet PDF, AS4C128M16D3-12BIN amp .Beyond Memory Alliance Memory, Inc. AS4C128M16D3-12BIN ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Alliance Memory, Inc. AS4C128M16D3-12BIN


Memory Alliance Memory, Inc. AS4C128M16D3-12BIN Overview

The Memory Alliance Memory, Inc. AS4C128M16D3-12BIN DRAM is a high-capacity, high-performance memory module designed to meet the demands of sophisticated electronic systems. With a density of 2 Gbit and packaged in a compact 96FBGA, this product offers robust parallel processing capabilities that are ideal for applications requiring high-speed data transmission and storage. Its advanced design ensures reliability and stability, making it an essential component for manufacturers looking to enhance system performance and longevity.

AS4C128M16D3-12BIN Features

This DRAM module boasts a variety of features that make it a top choice for technology solutions requiring intensive memory operations. Key features include a large 2Gbit capacity, high-speed parallel interface, and a low-profile 96FBGA package that fits into tighter spaces while providing excellent thermal performance and reduced power consumption.

AS4C128M16D3-12BIN Applications

  • Computing Systems: Utilized in desktops, laptops, and servers for enhanced memory capacity and faster processing speeds, facilitating complex computations and large-scale data processing.
  • Telecommunications: Key component in communication hardware such as routers and switches, where high-speed data transfer and buffer memory are critical for efficient data flow and system reliability.
  • Consumer Electronics: Applied in products like smart TVs and gaming consoles, providing the necessary speed and capacity to support high-resolution graphics and optimal user experience.
  • Industrial Automation: Used in industrial control systems where large amounts of data need to be processed reliably and quickly to maintain operational efficiency and system stability.
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