AS4C64M16MD1-6BCN

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Mfr.Part #
AS4C64M16MD1-6BCN
Manufacturer
Alliance Memory, Inc.
Package / Case
60-TFBGA
Datasheet
Download
Description
IC DRAM 1GBIT PARALLEL 60FBGA
Stock
35,666
In Stock :
35,666

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Manufacturer :
Alliance Memory, Inc.
Product Category :
Memory
Write Cycle Time - Word, Page :
15ns
Surface Mount :
yes
Package / Case :
60-TFBGA
Factory Lead Time :
8 Weeks
Memory Type :
Volatile
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Memory Width :
16
Operating Temperature :
-25°C~85°C TA
Published :
2011
Height Seated (Max) :
1.05mm
Supply Voltage-Min (Vsup) :
1.7V
Memory Format :
DRAM
Organization :
64MX16
Voltage - Supply :
1.7V~1.95V
Number of Functions :
1
Length :
10mm
Density :
1 Gb
Memory Size :
1Gb 64M x 16
Supply Voltage-Max (Vsup) :
1.95V
Number of Ports :
1
Terminal Position :
BOTTOM
Address Bus Width :
14b
Terminal Pitch :
0.8mm
Mounting Type :
Surface Mount
Number of Terminations :
60
RoHS Status :
RoHS Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Memory Interface :
Parallel
Operating Supply Voltage :
1.8V
Packaging :
Tray
ECCN Code :
EAR99
Clock Frequency :
166MHz
Additional Feature :
AUTO/SELF REFRESH
HTS Code :
8542.32.00.32
Operating Mode :
SYNCHRONOUS
Supply Voltage :
1.8V
Access Time :
5ns
Number of Pins :
60
Datasheets
AS4C64M16MD1-6BCN
Introducing Memory Alliance Memory, Inc. AS4C64M16MD1-6BCN from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:60-TFBGA, Operating Temperature:-25°C~85°C TA, Mounting Type:Surface Mount, Number of Terminations:60, Number of Pins:60, AS4C64M16MD1-6BCN pinout, AS4C64M16MD1-6BCN datasheet PDF, AS4C64M16MD1-6BCN amp .Beyond Memory Alliance Memory, Inc. AS4C64M16MD1-6BCN ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Alliance Memory, Inc. AS4C64M16MD1-6BCN


Memory Alliance Memory, Inc. AS4C64M16MD1-6BCN Overview

The Memory Alliance Memory, Inc. AS4C64M16MD1-6BCN is a high-performance 1Gbit DRAM chip designed to meet the demanding requirements of advanced computing systems. This integrated circuit features a parallel interface and is packaged in a compact 60FBGA, making it ideal for applications requiring high-speed data transfer and significant storage capacity. With its robust storage capabilities and efficient design, this DRAM is particularly suited for businesses looking to enhance their system's memory performance for better operational efficiency and reliability.

AS4C64M16MD1-6BCN Features

This integrated circuit boasts several key features that make it an outstanding choice for a wide range of applications. The AS4C64M16MD1-6BCN offers a 1Gbit capacity with a parallel interface that ensures fast data transfer rates, which is critical for high-performance computing environments. The 60FBGA packaging not only reduces the physical footprint but also enhances the thermal management and reliability of the device. This combination of high capacity and performance makes the AS4C64M16MD1-6BCN a versatile and efficient solution for modern memory needs.

AS4C64M16MD1-6BCN Applications

  • Consumer Electronics: Utilized in devices like smart TVs and gaming consoles to manage multiple applications and user interfaces simultaneously, ensuring smooth operation and an enhanced user experience.
  • Mobile Computing: Incorporated in laptops and tablets for its ability to handle intensive processing tasks while maximizing battery life, making it ideal for on-the-go users.
  • Networking Equipment: Used in routers and switches, where high-speed data transfer and reliability are crucial, to effectively manage and route large amounts of data traffic.
  • Automotive Systems: Applied in advanced driver-assistance systems (ADAS) to support real-time processing and decision-making, enhancing vehicle safety and performance.
  • Industrial Automation: Essential in industrial control systems for managing complex processes and machinery with precision and reliability, thereby increasing operational efficiencies and reducing downtime.
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