AS4C16M16S-6TAN
- Mfr.Part #
- AS4C16M16S-6TAN
- Manufacturer
- Alliance Memory, Inc.
- Package / Case
- 54-TSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PAR 54TSOP II
- Stock
- 29,825
- In Stock :
- 29,825
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- Manufacturer :
- Alliance Memory, Inc.
- Product Category :
- Memory
- Pin Count :
- 54
- Address Bus Width :
- 15b
- Voltage - Supply :
- 3V~3.6V
- Number of Terminations :
- 54
- Lead Free :
- Lead Free
- Density :
- 256 Mb
- Supply Voltage :
- 3.3V
- Number of Ports :
- 1
- Write Cycle Time - Word, Page :
- 12ns
- Terminal Pitch :
- 0.8mm
- Pbfree Code :
- yes
- Number of Pins :
- 54
- Length :
- 22.22mm
- Supply Voltage-Min (Vsup) :
- 3V
- Memory Interface :
- Parallel
- Package / Case :
- 54-TSOP (0.400, 10.16mm Width)
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Supply Voltage-Max (Vsup) :
- 3.6V
- ECCN Code :
- EAR99
- Published :
- 2012
- Memory Format :
- DRAM
- Operating Mode :
- SYNCHRONOUS
- Operating Supply Voltage :
- 3.3V
- Packaging :
- Tray
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- RoHS Compliant
- Terminal Finish :
- PURE MATTE TIN/TIN BISMUTH
- Max Supply Current :
- 100mA
- Height Seated (Max) :
- 1.2mm
- Memory Width :
- 16
- Additional Feature :
- AUTO/SELF REFRESH
- Surface Mount :
- yes
- JESD-609 Code :
- e3/e6
- Organization :
- 16MX16
- Memory Type :
- Volatile
- Operating Temperature :
- -40°C~105°C TA
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Memory Size :
- 256Mb 16M x 16
- Number of Functions :
- 1
- Access Time :
- 5.4ns
- Data Bus Width :
- 16b
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Clock Frequency :
- 166MHz
- Datasheets
- AS4C16M16S-6TAN
AS4C16M16S-6TAN Documents

[Memory Alliance Memory, Inc. AS4C16M16S-6TAN] Overview
Discover the pinnacle of data storage and retrieval with the Memory Alliance Memory, Inc. AS4C16M16S-6TAN. This cutting-edge integrated circuit dynamic random-access memory (DRAM) module redefines efficiency and performance in the realm of digital data handling. Engineered with precision and innovation, this 256MBIT PAR 54TSOP II marvel empowers industries with unparalleled processing capabilities.
AS4C16M16S-6TAN Features
- High Capacity: Boasting a generous 256MBIT storage capacity, the AS4C16M16S-6TAN ensures ample space for storing critical data sets.
- Lightning-Fast Speeds: With lightning-fast access times, this DRAM module enhances operational efficiency and reduces latency, enabling seamless data retrieval.
- Robust Construction: Crafted with superior materials and advanced manufacturing techniques, the AS4C16M16S-6TAN guarantees durability and reliability even in demanding environments.
- Energy-Efficient Design: Designed for optimal energy efficiency, this module minimizes power consumption without compromising performance, making it an eco-friendly choice for sustainable operations.
- Compatibility: Featuring universal compatibility with a wide range of devices and systems, the AS4C16M16S-6TAN seamlessly integrates into existing setups for hassle-free deployment.
AS4C16M16S-6TAN Applications
- Industrial Automation: Revolutionize industrial automation systems with the AS4C16M16S-6TAN, enhancing data processing speed and reliability for seamless operation in manufacturing and control systems.
- Telecommunications Infrastructure: Elevate telecommunications infrastructure with the AS4C16M16S-6TAN, enabling high-speed data transfer and efficient management of network traffic for enhanced connectivity.
- Medical Devices: Enhance the performance of medical devices with the AS4C16M16S-6TAN, ensuring rapid data access and processing for real-time monitoring and diagnostic applications in healthcare settings.
- Automotive Electronics: Optimize automotive electronics with the AS4C16M16S-6TAN, enabling advanced functionalities such as infotainment systems, driver assistance features, and vehicle diagnostics for a safer and more enjoyable driving experience.
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