AS4C16M16D1-5TIN

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Mfr.Part #
AS4C16M16D1-5TIN
Manufacturer
Alliance Memory, Inc.
Package / Case
66-TSSOP (0.400, 10.16mm Width)
Datasheet
Download
Description
IC DRAM 256MBIT PAR 66TSOP II
Stock
29,417
In Stock :
29,417

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Manufacturer :
Alliance Memory, Inc.
Product Category :
Memory
Address Bus Width :
13b
Mount :
Surface Mount
Memory Type :
Volatile
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Clock Frequency :
200MHz
Width :
10.29mm
Supply Voltage-Min (Vsup) :
2.3V
Operating Temperature :
-40°C~85°C TA
Mounting Type :
Surface Mount
Peak Reflow Temperature (Cel) :
260
Supply Voltage :
2.5V
Published :
2013
I/O Type :
COMMON
Data Bus Width :
16b
Packaging :
Tray
Pbfree Code :
yes
Terminal Pitch :
0.65mm
Density :
256 Mb
Time@Peak Reflow Temperature-Max (s) :
40
Number of Terminations :
66
Number of Pins :
66
Output Characteristics :
3-STATE
Memory Interface :
Parallel
Terminal Position :
Dual
Length :
22.35mm
HTS Code :
8542.32.00.24
Memory Size :
256Mb 16M x 16
Operating Supply Voltage :
2.5V
Number of Ports :
1
Voltage - Supply :
2.3V~2.7V
RoHS Status :
RoHS Compliant
Access Time :
700ps
Write Cycle Time - Word, Page :
15ns
Organization :
16MX16
Height :
1.1mm
Number of Functions :
1
ECCN Code :
EAR99
Refresh Cycles :
8192
Supply Voltage-Max (Vsup) :
2.7V
Memory Format :
DRAM
Terminal Finish :
PURE MATTE TIN/TIN BISMUTH
Lead Free :
Lead Free
JESD-609 Code :
e3/e6
Radiation Hardening :
No
Package / Case :
66-TSSOP (0.400, 10.16mm Width)
Data Rate :
400 Mbps
Pin Count :
66
Additional Feature :
AUTO/SELF REFRESH
Introducing Memory Alliance Memory, Inc. AS4C16M16D1-5TIN from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~85°C TA, Mounting Type:Surface Mount, Number of Terminations:66, Number of Pins:66, Package / Case:66-TSSOP (0.400, 10.16mm Width), AS4C16M16D1-5TIN pinout, AS4C16M16D1-5TIN datasheet PDF, AS4C16M16D1-5TIN amp .Beyond Memory Alliance Memory, Inc. AS4C16M16D1-5TIN ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Alliance Memory, Inc. AS4C16M16D1-5TIN


Memory Alliance Memory, Inc. AS4C16M16D1-5TIN Overview

The AS4C16M16D1-5TIN from Alliance Memory, Inc. is a high-performance, 256Mbit DRAM integrated circuit designed to meet the rigorous demands of various memory applications. This component utilizes advanced DRAM technology to provide a reliable and robust memory solution, making it ideal for businesses looking to enhance their systems' memory capacity and speed. The AS4C16M16D1-5TIN's incorporation in high-volume systems demonstrates its effectiveness in delivering superior performance and durability, positioning it as a pivotal solution for manufacturers and system integrators requiring high-grade memory components.

AS4C16M16D1-5TIN Features

The AS4C16M16D1-5TIN offers several distinctive features that make it an attractive option for numerous applications. It operates in a parallel interface, has a configuration of 16M x 16, and is packaged in a 66-pin TSOP II format. With a speed of 5ns, it provides efficient, high-speed data processing capabilities that are essential for modern electronics. The product's extended temperature range also ensures performance stability under diverse environmental conditions.

AS4C16M16D1-5TIN Applications

  • Consumer Electronics: Used in devices such as digital cameras and audio players, where consistent and quick memory is crucial for user experience.
  • Gaming Consoles: Enhances the performance of gaming systems by providing high-speed data access and storage, resulting in smoother gameplay and quicker load times.
  • Automotive Systems: Applied in advanced driver-assistance systems (ADAS) to process large amounts of data reliably and quickly, enhancing vehicle safety and performance.
  • Industrial Automation: In PLC systems, the AS4C16M16D1-5TIN ensures fast processing and responsiveness, critical for real-time automation and control processes.
  • Networking: Utilized in routers and switches, providing the necessary memory bandwidth to handle high-speed network traffic and large data volumes efficiently.
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