AS4C128M8D2-25BINTR

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Mfr.Part #
AS4C128M8D2-25BINTR
Manufacturer
Alliance Memory, Inc.
Package / Case
60-TFBGA
Datasheet
Download
Description
IC DRAM 1GBIT PARALLEL 60FBGA
Stock
22,411
In Stock :
22,411

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Manufacturer :
Alliance Memory, Inc.
Product Category :
Memory
Factory Lead Time :
8 Weeks
I/O Type :
COMMON
Memory Width :
8
Mounting Type :
Surface Mount
Number of Pins :
60
Organization :
128MX8
Density :
1 Gb
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Access Time :
400ps
Interleaved Burst Length :
48
Terminal Position :
BOTTOM
Surface Mount :
yes
Operating Temperature :
-40°C~95°C TC
Max Supply Current :
85mA
Supply Voltage :
1.8V
Refresh Cycles :
8192
Data Bus Width :
8B
Sequential Burst Length :
48
Address Bus Width :
14b
Memory Interface :
Parallel
Operating Supply Voltage :
1.8V
Clock Frequency :
400MHz
Write Cycle Time - Word, Page :
15ns
Qualification Status :
Not Qualified
Terminal Pitch :
0.8mm
Published :
2013
Memory Format :
DRAM
Number of Terminations :
60
Output Characteristics :
3-STATE
RoHS Status :
ROHS3 Compliant
Voltage - Supply :
1.7V~1.9V
Memory Type :
Volatile
Package / Case :
60-TFBGA
Memory Size :
1Gb 128M x 8
Introducing Memory Alliance Memory, Inc. AS4C128M8D2-25BINTR from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:60, Operating Temperature:-40°C~95°C TC, Number of Terminations:60, Package / Case:60-TFBGA, AS4C128M8D2-25BINTR pinout, AS4C128M8D2-25BINTR datasheet PDF, AS4C128M8D2-25BINTR amp .Beyond Memory Alliance Memory, Inc. AS4C128M8D2-25BINTR ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Alliance Memory, Inc. AS4C128M8D2-25BINTR


Memory Alliance Memory, Inc. AS4C128M8D2-25BINTR Overview

Introducing the Memory Alliance Memory, Inc. AS4C128M8D2-25BINTR, a high-performance IC DRAM designed to meet the demanding needs of modern technology systems. With a robust 1Gbit capacity and a 60FBGA package, this memory module offers exceptional reliability and speed, making it an ideal choice for manufacturers looking to enhance their products with superior memory solutions. The DRAM's architecture is tailored to deliver high-speed data transmission and low power consumption, which are crucial for achieving efficient system performance in a variety of applications.

AS4C128M8D2-25BINTR Features

This DRAM module boasts several features that make it a standout choice for integration in advanced electronics. Key features include its large 1Gbit storage capacity, parallel interface for swift data handling, and compact 60FBGA packaging that allows for minimal space utilization in system design. Its high data integrity and low latency are ideal for applications requiring rapid access to large volumes of data, while its low power draw ensures that the device remains energy efficient under heavy operational conditions.

AS4C128M8D2-25BINTR Applications

  • Consumer Electronics: Utilized in devices such as smartphones, tablets, and personal computers, this DRAM enhances multitasking capabilities and improves overall device responsiveness.
  • Networking Equipment: Ideal for routers and switches, where large, fast memory is crucial for managing high-speed data traffic and maintaining system stability.
  • Automotive Systems: Used in advanced driver-assistance systems (ADAS) to process large amounts of data from sensors and cameras, improving reaction times and vehicle safety.
  • Industrial Automation: Supports complex industrial machinery and control systems requiring quick data access and high reliability in harsh environments.
  • Video Surveillance: Essential for high-definition video recording and storage, ensuring continuous and reliable monitoring.
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Shipping Cost

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