AS4C128M8D2-25BCN

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Mfr.Part #
AS4C128M8D2-25BCN
Manufacturer
Alliance Memory, Inc.
Package / Case
60-TFBGA
Datasheet
Download
Description
IC DRAM 1GBIT PARALLEL 60FBGA
Stock
38,694
In Stock :
38,694

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Manufacturer :
Alliance Memory, Inc.
Product Category :
Memory
Access Time :
400ps
Memory Size :
1Gb 128M x 8
Terminal Position :
BOTTOM
Height Seated (Max) :
1.2mm
Packaging :
Tray
Address Bus Width :
14b
Length :
10mm
RoHS Status :
ROHS3 Compliant
Factory Lead Time :
8 Weeks
HTS Code :
8542.32.00.32
Terminal Pitch :
0.8mm
Density :
1 Gb
Operating Supply Voltage :
1.8V
Operating Temperature :
0°C~85°C TC
Number of Pins :
60
Write Cycle Time - Word, Page :
15ns
Organization :
128MX8
Supply Voltage :
1.8V
Number of Terminations :
60
Radiation Hardening :
No
Data Bus Width :
8B
Memory Interface :
Parallel
Voltage - Supply :
1.7V~1.9V
Additional Feature :
AUTO/SELF REFRESH
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Memory Type :
Volatile
Published :
2013
Clock Frequency :
400MHz
Package / Case :
60-TFBGA
Surface Mount :
yes
Mounting Type :
Surface Mount
Supply Voltage-Max (Vsup) :
1.9V
Memory Format :
DRAM
Memory Width :
8
Number of Functions :
1
Number of Ports :
1
Supply Voltage-Min (Vsup) :
1.7V
Lead Free :
Lead Free
Datasheets
AS4C128M8D2-25BCN
Introducing Memory Alliance Memory, Inc. AS4C128M8D2-25BCN from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:0°C~85°C TC, Number of Pins:60, Number of Terminations:60, Package / Case:60-TFBGA, Mounting Type:Surface Mount, AS4C128M8D2-25BCN pinout, AS4C128M8D2-25BCN datasheet PDF, AS4C128M8D2-25BCN amp .Beyond Memory Alliance Memory, Inc. AS4C128M8D2-25BCN ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Alliance Memory, Inc. AS4C128M8D2-25BCN


Memory Alliance Memory, Inc. AS4C128M8D2-25BCN Overview

The Memory Alliance Memory, Inc. AS4C128M8D2-25BCN DRAM stands out as a premier solution in the world of digital storage and memory technology. Engineered by Alliance Memory, Inc., this integrated circuit is specifically designed to handle robust applications requiring high-capacity and high-speed data storage. Boasting a substantial 1Gbit capacity housed within a compact 60FBGA package, this DRAM facilitates seamless integration into various high-performance computing environments, ensuring efficient operation and reliability.

AS4C128M8D2-25BCN Features

This high-performance IC features a 1Gbit DRAM using a parallel interface for fast data throughput, ideal for applications that demand high-speed data processing. The compact 60FBGA package ensures minimized space usage while maximizing thermal and electrical performance, making it suitable for tightly-packed system designs. Its compatibility with industrial standard protocols and applications enhances its versatility, fitting a wide range of electronic assemblies.

AS4C128M8D2-25BCN Applications

  • Computing Systems: Utilized in desktops and laptops for enhanced multitasking and efficient processing of large-scale software applications.
  • Embedded Systems: Critical for use in embedded computing devices, providing the necessary speed and capacity for handling complex computations and functionalities.
  • Networking Equipment: Key component in routers and switches, facilitating rapid data exchange and improving bandwidth capacity.
  • Telecommunications: Supports the demanding memory requirements of telecommunications infrastructure, contributing to improved system reliability and performance.
  • Industrial Applications: Ideal for robust industrial environments where high-capacity and durable memory solutions are required for process control and automation systems.
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